Sidee buu u yahay graphite oxide warqad khafiif ah iyo garaafka diyaarinta iyo sifada

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Lakabka garaafiga ah ee dhuuban ee warqadda u eg ayaa si guul leh loogu diyaariyey habka Hummers oo wax laga beddelay, lakabka garaafka oksijiinta ee diyaarsanna waxa la dhimay sida nanomaterial graphene oo leh hydrazine. Alaabooyinka synthesis ee Fourier waxay u beddelaan infrared spectroscopy (FT-IR), Raman Spectroscopy (RS), X-ray Diffraction (XRD), Scanning Electron Microscope (SEM), Gudbinta Electroractor (TEM), iyo Wakaalada (AFM), iwm. Qaab dhismeedka iyo waxqabadka ayaa lagu gartaa.

Natiijooyinka waxay muujinayaan in dhumucda graphene ay tahay 0.36 nm, tirada lakabyada waa 3. Intaa waxaa dheer, habka falcelinta ee habka Hummers ee wax laga beddelay ayaa lagu diyaariyay habka falcelinta ee garaafiga oksijiinta warqad-u eg, iyo habka fal-celinta kiimikada ee dhacaya inta lagu jiro oksaydhka garaafyada garaafka ayaa la falanqeeyay.

Sannadkii 2004, GEIM et al, waxay diyaariyeen laba-geesood atomic crystal-graphene oo cusub oo ka kooban SP2 lakabyada atomiga kaarboon isku-dhafka ah iyadoo la adeegsanayo habka farsamaynta. Unugga aasaasiga ah ee graphene waa giraanta lix yuan ee benzene, kaas oo ah 0.34 nm oo keliya.

Sidaa darteed, graphene waxay leedahay waxyaabo badan oo kimistari jireed oo aad u fiican, sida 100 jeer xoogga birta, ilaa 130gPa, dhaqdhaqaaqa xamuulku wuxuu gaaraa 15000 cm2 / (v · s), kuleylka kuleylka waa 5000W / (m · K). Intaa waxaa dheer, graphene sidoo kale waxay leedahay sifooyin gaar ah sida heerkulka qolka quantum Hall saamaynta iyo heerkulka qolka sifooyinka ferromagnetic. Waqtigan xaadirka ah, habka diyaarinta ee graphene inta badan waa habka jeexjeexa makaanikada yar yar, kaydinta uumiga kiimikada, habka dhimista redox kiimikaad, habka koritaanka epitaxial crystal iyo habka kulaylka dareeraha.

Waxaa ka mid ah, habka xoqidda micromechanical wuxuu diyaarin karaa graphene ee cabbirka micron, laakiin xakamaynta ayaa hooseysa, way adagtahay in la gaaro wax soo saar ballaaran. Habka koritaanka epitaxial crystal wuxuu u nugul yahay dib-u-dhiska sababtoo ah dusha sare ee crystal SiC, si aag weyn, dhumucdiisuna waxay la mid tahay hal graphene. Habka kaydinta uumiga kiimikada (CVD) waa substrate leh bir hal crystal ah ama filim bir ah, kaas oo kori kara lakabka khafiifka ah ee lakabka graphene, laakiin nadiifinta graphene maaha mid sarreeya, wax soo saar ballaaranna lama gaari karo.

Habka kulaylka dareeraha ah waxaa sabab u ah xaaladaha adag sida heerkulka sare iyo cadaadiska sare, iyo habdhaqanka wax soo saarku waa hooseeyaa, mana jirto suurtogalnimada wax soo saarka ballaaran. Habka dhimista redox kiimikaad waa in lagu diyaariyo graphene by ultrasonic xariijimaha iyo habka dhimista habka Hummers. Sababtoo ah wareegga wax soo saarka gaaban ee habka, faa&39;iidooyinka wax soo saarka sare ee synthetic ayaa si ballaaran u saameeya iyo daraasadaha.

Inta lagu jiro habka Hummers, garaafyada waa la diyaariyaa, oo ay ku jiraan heerkul hooseeya (0 ° C), heerkulka dhexdhexaadka ah (38 ° C) iyo heerkulka sare (98 ° C), iyo wakiilka oksaydhisku wuxuu ku urursan yahay H2SO4 iyo KMNO4. Iyada oo loo marayo daraasadda habka oksaydhka garaafka, habka Hummers ayaa wax laga beddelay, taas oo ah, muddada wakhtiga heerka falcelinta heerkulka dhexdhexaadka ah la kordhinayo, iyo heerka falcelinta heerkulka sare waa la joojiyay. Joojinta habka falcelinta ee heerka heerkulka sare, ma aha oo kaliya ka fogaanshaha khataraha qarxinta ee ay keento sulfuric acid inta lagu jiro falcelinta heerkulka sare, laakiin sidoo kale ka fogaanshaha falcelinta kuleylka kuleylka ee heerka heerkulka sare, yaraynta heerka oksaydhka ee graphite.

Aragtida iyo tijaabada, lakabka oksaydhka ee lakabka ah waxaa lagu diyaarin karaa heerkul hooseeya iyo xaalado ammaan ah oo deggan. Garaafyada diyaarinta ah waxaa hoos u dhigay hydrate-hydrate si loo diyaariyo nanomaterials graphene, iyo diyaarinta graphite-garaafiga ah ee warqadda khafiifka ah iyo walxaha garaafka ayaa la soo saaray. 1, tijaabo 1.

1, garaafka miisaanka alaabta ceeriin (granularity: 325 mesh, nanotechnology koowaad ee hodanka ah Co., Ltd.); sulfuric acid xoog leh (95% ~ 98%); potassium permanganate, sodium nitrate, hydrogenated (30%), hydrochloric acid, chlorination Barium, hydrate (80%), iwm.

waa la falanqeeyaa. Daawooyinka kor ku xusan si gaar ah looma xusin, waxaana laga soo iibsadaa Shirkadda Shanghai Chemical Reagent Company of China Pharmaceutical Group. Dhammaan reage-yaasha sare si toos ah looma maareeyo.

1.2, diyaarinta muunad 1) Khad khafiif ah oo warqad-sida oksaydh (GO) diyaarinta lakabka 230 mL (98%) sulfuric acid xoog leh 1000 ml oo saddex galaas ah, oo hoos yimaada heerkulka joogtada ah ee xoogga magnetic iyo biyaha barafka, 5.0 gnano3 iyo 10.

0 g Isku dhafka garaafka, walaaqaya dhexdhexaad ah xawaare dhexdhexaad ah 30 min, si ay isku qasan. 30GKMNO4 ayaa si tartiib tartiib ah loogu daray isku dar ah, oo walaaqaya 0 ° C ilaa 2 saacadood. Saddexda galaas waxa loo raray qubeyska heerkulka joogtada ah ee lagu hagaajiyay heerkul ku dhow 38 ° C, oo socday 30 saacadood, iyo falcelinta heerkulka dhexdhexaadka ah ayaa la sameeyay.

Ka dib heerkulka falcelinta heerkulka dhexdhexaadka ah, isku dar ah ayaa loo wareejiyay 2000 ml oo biyo ah, lagu qasi jiray biyo deionized ilaa 1000 mL, iyo 200 ml (5%) H2O2 ayaa lagu daray, dareeraha falcelinta ayaa isu beddelay midab dahab ah. Centrifugation waxaa lagu fuliyay centrifuge-xawaaraha sare leh, iyo wareegga wareegga ahaa 4000 r / min, lagu dhaqay pre-pre-preformed 5% HCl iyo biyo deionized ilaa sulfuric acid sulfuric acid ee sifaynta la ogaaday, iyo ganaax la barokiciyey in saxan Vaporating ah 60Vacuum garaafka 2) Hoos u dhigista graphene ayaa lagu kala firdhiyey 100 ml oo ah khad garaaf ah oo ka dhashay 100 ml oo ah xal aqueous ah si loo helo hakinta bunni-jaalle ah, iyo xaaladaha ultrasound ayaa lagu kala firdhiyey weel saddex-af ah, oo loo kululeeyey 90 ° C, faleebo 2 ml oo biyo ah oo fuuqbax ah, ka dib markii 2 falcelinta lagu shaandheeyo xaalado badan oo biyo ah. methanol iyo biyo, iyo graphene ayaa la qalajiyey in ka badan 60 ° C.

1.3, tijaabinta iyo astaamaha falanqaynta kala-duwanaanta XRD iyadoo la adeegsanayo Japanese Rigaku D / MAX-RB diffractometer (Cu bartilmaameed, shucaaca Kα, λ = 0.154056 nm), cabbirka iskaanka 5 ° ~ 80 °; Falanqaynta infrared spectroscopy (FT-IR) ThermonicoLET&39;s NEXUS Fourier waxay beddelaysaa spectrum infrared spectrum, kiniinnada KBR, dhererka dhererka 400 ~ 4000cm-1; Raman spectroscopy (Raman) wuxuu falanqeeyaa nooca INVIA-ka microclassless laser Raman spectrometer ee British Renishaw, Kala duwanaanta rikoorku waa 100 ilaa 3200 cm-1, hirarka laser waa 785 nm, xallinta boosku waa jihada 1 μm, dhererka ilaa 1 μm; mikroskoob ee elektarooniga ah (SEM) wuxuu qaataa mikroskoob elektaroonik ah oo S-4800 FESEM ah; Mikroskoobyada elektarooniga ah ee gudbiya (TEM) waxay qabataa shirkadda Japan JEO ee JEM-2100F-nooca nooca ah waxay gudbisaa mikroskoob elektaroonig ah oo gudbinta xallinta sare; Mikroskoob ee xoogga atomiiga ah (AFM) wuxuu qaataa mikroskoobyada xoogga atomiiga ee nooca US Veeco ee Nanoscope4.

Gabagabo a. Iyadoo la falanqeynayo habka oksaydhka ee habka oksaydhka garaafka, habka Hummers ee la beddelay kaas oo heerka falcelinta heerkulka sare la joojiyay, iyo graphene waxaa lagu helay diirinta ultrasound iyo daaweynta yaraynta fuuq-baxa. B.

Natiijooyinka imtixaanka TEM iyo AFM waxay muujinayaan in dhumucda graphene ay tahay 0.36 nm, tirada lakabyadu waa 3. c.

Habka waa mid ammaan ah oo fudud, wax soo saarku waa weyn yahay, sahlan tahay in la xakameeyo, wuxuu bixiyaa degdeg ah oo sahlan, diyaarin ballaaran oo ah graphene warqad khafiif ah, wuxuu bixiyaa aasaaska codsiga ganacsiga ee graphene. .